Gan Tabanlı Heteroeklem Yapıların Magnetotransport Özellikleri

Abstract

Van der Pauw, Hall and longitudinal magnetoresistance measurements were performed on AlGaN/AlN/GaN, AlInN/AlN/GaN and AlInN/GaN/AlN/GaN heterostructures at 1.9–300 K temperature range. The Hall carrier concentration, Hall mobility, Two Dimensional Electron Gas (2DEG) concentration and quantum mobility were determined from the measurements. The results indicate that the layer structure plays important role on the magnetotransport properties of the heterostructures. Hence, for time being, because of only few work of magnetotransport study existed in the literature for an AlInN/GaN/AlN/GaN heterostructure has also motivated this study in terms of layer structure. As a qualitative explanation, the difference of the polarization fields of the samples has been regarded as the cause of the results.