Gan Tabanlı Heteroeklem Yapıların Magnetotransport Özellikleri
Özet
Van der Pauw, Hall and longitudinal magnetoresistance measurements were
performed on AlGaN/AlN/GaN, AlInN/AlN/GaN and AlInN/GaN/AlN/GaN
heterostructures at 1.9–300 K temperature range. The Hall carrier concentration,
Hall mobility, Two Dimensional Electron Gas (2DEG) concentration and quantum
mobility were determined from the measurements.
The results indicate that the layer structure plays important role on the
magnetotransport properties of the heterostructures. Hence, for time being,
because of only few work of magnetotransport study existed in the literature for an
AlInN/GaN/AlN/GaN heterostructure has also motivated this study in terms of layer
structure. As a qualitative explanation, the difference of the polarization fields of
the samples has been regarded as the cause of the results.
