Hidrojenlendirilmiş Nanaokristal Silisyum Örneklerin Üretimi ile Eletronik ve Optik Özelliklerinin İncelenmesi

Abstract

Hydrogenated nanocrystalline silicon (nc-Si:H) and microcrystalline silicon (c-Si:H) thin film samples have been produced on glass and crystalline silicon wafer substrates by using highly diluted silane gas (SiH4) with hydrogen (H2) in a RF-PECVD system operating at 13,56MHz. Two different set of samples have been prepared at vacuum chamber pressures of 200 and 1900 mTorr and at substrate temperatures of 300 and 150C. Most of the samples were deposited at these conditions by varying RF power within the range of 10 - 30 W and H2 dilution rate between 85 - 90%. To adjust the H2 dilution rate, the flow rate of H2 was kept constant at 100 sccm and SiH4 flow rate were changed within the range of 1 and 17 sccm.To characterize the thin film samples, we used the experimental techniques mainly Raman scattering, optical transmission, temperature dependent dark conductivity, constant photocurrent method.