ANTİMON SELENYUM İNCE FİLMLERİN SPUTTER TEKNİĞİ İLE SENTEZİ VE KARAKTERİZASYONU

Abstract

In this thesis study, the synthesis and characterization of antimony selenium (Sb2Se3) for use as an absorber layer in photovoltaic panels were investigated. This material is considered a strong alternative to the existing absorber layers due to its advantages. The synthesis of Sb₂Se₃ thin films was carried out in two stages. First, Sb was deposited on soda lime glass using the RF magnetron sputtering method, and then these Sb thin films were subjected to selenization in a single-zone tubular furnace. In the RF magnetron sputtering system, the deposition process was performed with different substrate holder temperatures for each sample. However, all parameters were the same during the selenization process. The obtained samples were then analyzed based on XRD, Raman, SEM, and EDS analyses. All XRD patterns matched completely with the orthorhombic Sb₂Se₃ structure. SEM analysis showed that growth in the [hk0] direction was dominant for the samples deposited at room temperature, 200 and 225 °C, whereas growth in the [hk1] and [hk2] directions was dominant for the samples deposited at 250, 275 and 300 °C. Raman analysis revealed peaks corresponding to the orthorhombic Sb₂Se₃ structure. Finally, EDS analysis determined the Sb: Se atomic ratio, but this value was not at the desired ratio. Considering the results from all analysis methods, it was observed that the sample with the substrate holder temperature of 250 °C was the most suitable for the orthorhombic Sb₂Se₃ structure.