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Aktif Frekans Seçici Yüzey Tasarımı

dc.contributor.advisorSaka Tanatar, Birsen
dc.contributor.authorSarıbay, Erkan
dc.date.accessioned2023-12-12T11:36:41Z
dc.date.issued2023
dc.date.submitted2023-09-14
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dc.identifier.urihttps://hdl.handle.net/11655/34268
dc.description.abstractIn this study, three different design of active frequency selective surface are presented. The first design has a single layer structure on a 1.6 mm thick FR-4 dielectric material. The unit cell consists of circular structure, patch and PIN diodes and is capable of switching between transmit and reflect modes in the 2.1 – 2.2 GHz band. The second design has a double layer structure on 1.6 mm thick FR-4 dielectric material. The unit cell consists of circular structure and PIN diodes and has the ability to operate independently of each other in the 2.3 – 2.9 GHz and 5.4 – 6.2 GHz bands and to switch between transmission and reflection modes in these bands. Both designs showed insensitivity up to different polarization and a certain angle of incidence. The equivalent circuit model method was used in the design process. The first design was manufactured and measured with the aid of a waveguide. In the third design, the effect of different PIN diode configurations on the radiation reflected or transmitted by the frequency selective surface was examined.tr_TR
dc.language.isoturtr_TR
dc.publisherFen Bilimleri Enstitüsütr_TR
dc.rightsinfo:eu-repo/semantics/openAccesstr_TR
dc.subjectAktif frekans seçici yüzeytr_TR
dc.subjectPIN diyottr_TR
dc.subjectEşdeğer devre modelitr_TR
dc.subjectİletimtr_TR
dc.subjectYansıtmatr_TR
dc.subjectFrekans kontrolütr_TR
dc.subject.lcshElektrik-Elektronik mühendisliğitr_TR
dc.titleAktif Frekans Seçici Yüzey Tasarımıtr_TR
dc.typeinfo:eu-repo/semantics/masterThesistr_TR
dc.description.ozetBu çalışmada üç farklı aktif frekans seçici yüzey tasarımı sunulmuştur. İlk tasarım 1.6 mm kalınlığında FR-4 dielektrik malzeme üzerinde tek katmanlı yapıya sahiptir. Birim hücre dairesel yapı, yama ve PIN diyotlardan oluşur ve 2.1 – 2.2 GHz bandında iletim ve yansıtma modları arasında geçiş yapabilme yeteneğine sahiptir. İkinci tasarım 1.6 mm kalınlığında FR-4 malzeme üzerinde çift katmanlı yapıya sahiptir. Birim hücre dairesel yapı ve PIN diyotlardan oluşur ve 2.3 – 2.9 GHz ve 5.4 – 6.2 GHz bantlarında birbirinden bağımsız olarak çalışabilme ve bu bantlarda iletim ve yansıtma modları arasında geçiş yapabilme yeteneğine sahiptir. Her iki tasarımda farklı polarizasyona ve belirli bir geliş açısına kadar kararlılık göstermiştir. Tasarım sürecinde eşdeğer devre modeli yönteminden faydalanılmıştır. İlk tasarım üretilmiş ve dalga kılavuzu yardımıyla ölçülmüştür. Üçüncü tasarımda, farklı PIN diyot konfigürasyonlarının frekans seçici yüzeyin yansıttığı veya ilettiği ışımaya olan etkisi incelenmiştir.tr_TR
dc.contributor.departmentElektrik –Elektronik Mühendisliğitr_TR
dc.embargo.termsAcik erisimtr_TR
dc.embargo.lift2023-12-12T11:36:41Z
dc.fundingYoktr_TR


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