Çinko-Oksit(Zno) İnce Filmlerin Sentezlenmesi ve Fotovoltaik Özelliklerinin İncelenmesi

Abstract

This work includes the investigation of structural, optical and electrical properties of ZnO and ZnO:Ge thin films deposited onto p type Si substrates with reactive and non-reactive magnetron sputtering processes. It is aimed to determine how do the physical propreties of thin films change with quantum confinement effect that changes the band structure of Ge doped into ZnO films. For this purpose, very thin Ge layers was deposited between ZnO thin film layers deposited under reactive and non-reactive conditions and Ge nanoparticles was occured by annealing of these layers at 600°C for 60 seconds. Diode fabrications have been done onto samples deposited under reactive and non-reactive conditions and applied annealing processes, and the electrical properties of them heve been investigated. Structural characterizations of films synthesized have been performed with XRD, SEM and Raman Spectroscopy. Spectral responses of the films have been performed with photoluminescence (PL) spectral measurements. And the electrical properties of films and heterojunction diodes have been investigated with the IV measuremant under dark and illuminated ambient, the beahviours and performans of samples depending on doping, annealing and reactivity of processes have been investigated. Open circuit voltages and short circuit currents of the diodes produced have been measured under solar simulator. The resistivity of the films decreases with doping and annealing porcesses. The resistivity of flms deposited with reactive processes are higher than non-reactive processes'. While the open cricuit voltages can reach 239 mV, the short circuit currents stays under the measurement limit of 10 nA.