GAN Güç Tranzistörüne Dayalı, Yüksek Güç Yoğunluklu Çift Aktif Köprü DA/DA Çevirgeç Tasarımı ve Gerçekleştirilmesi

Abstract

In this study, a Dual Active Bridge DC/DC converter using GaN HEMT type transistors on both bridges is designed and implemented with input voltage in the range of 350-400 VDC, rated output voltage of 14.5VDC and output current of approximately 240A, 3.5kW output rated power, 150 kHz switching frequency which can be used in electric vehicle applications. DC-DC converter design and experimental studies were performed. The control of the bridges with single phase shift modulation technique has been achieved with the original transformer design of the converter and the use of new generation power switches in operation, thus achieving full load efficiency above 98%. A first sample was produced to see the performance of the designed and simulated DC-DC converter. Then the design was implemented and tested successfully in laboratory environment. Finally, the design verification was completed by comparing the experimental results with the simulation results.