Fotovoltaik Ge-Zno Nanokompozit İnce Filmlerin Hazırlanması ve Fiziksel Özelliklerinin Araştırılması
Özet
In this study, nowadays an alternative method for commercially produced solar cells, Zinc- Oxide: Germanium (ZnO: Ge) nanocomposite thin films which have the potential of using as the intermediate band solar cells were prepared. RF magnetron sputtering technique was used for the synthesis of these structures. By adding different sizes of Ge nanoparticles into the ZnO wide band gap semiconductor, the optical bandwidth of ZnO is changed and the response of ZnO: Ge nanocomposite structures to light are discussed. In order to obtain ZnO: Ge nanocomposite structure, different thicknesses of ZnO and Ge layers were coated on the quartz and silicon substrates and by post annealing, Ge layers were clustered to take nanoparticle forms. Ge nanoparticles were obtained by applying conventional furnace annealing (CFA) and rapid thermal annealing processes to the nanocomposite thin films, optical and electrical properties were investigated.
