Odaklanmış İyon Işını İle Memristor Üretim Süreci Geliştirme ve Elektriksel Karakterizasyonu

Abstract

The transistor element, which is one of the most important building blocks of electronics, has provided the realization of many digital logic circuits and memory applications. However, due to the fact that the transistors can only do two-stage switching, there have been situations where the expected capacity for the increased processing power could not be realized. The memristor element offers a solution for these situations. While the memristor was first introduced as a theoretical equation, it was later produced physically. The biggest advantage of the memristor is that it can switch in more than two stages. This shows its potential for use in much higher capacity digital circuit and memory applications. The first physical memristor production was produced with titanium oxide-based material. In this study, titanium oxide forms the basis of the memristive material. The anodic oxidation process was applied to produce the titanium oxide material. Titanium is oxidized by electrochemical reaction under voltage controlled circuit in an acidic solution. The original aspect of the study is the memristor geometries formed by etching the titanium oxide layer. The oxygen gap formed between the two electrodes of the memristor cascade switching process is provided by an ionic or ferromagnetic bridge structure. In this study, as a titanium oxide-based memristor was used, the bridge structure was formed with oxygen vacancies. The variation of the bridge formed according to the distance between the electrodes affects the resistance value difference during the on-off process of the memristor. It is aimed to increase the difference in memristor resistance value by creating more symmetrical and smooth bridge structures by narrowing the distance between the electrodes as much as possible. The nano-sized distance between the electrodes is provided by focused ion beam. Since the focused ion beam provides both consistent and precise etching, various geometries in the memristive structure were tried to obtain as narrow distance as possible between the electrodes. Later, the characterization of the obtained memristor geometries was provided by 4-point current-voltage measurement and the effectiveness of the memristors was observed according to the resistance differences exhibited during on-off.