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dc.contributor.authorSalihoglu, Omer
dc.contributor.authorTansel, T.
dc.contributor.authorHostut, M.
dc.contributor.authorErgun, Y.
dc.contributor.authorAydinli, A.
dc.date.accessioned2019-12-13T10:46:33Z
dc.date.available2019-12-13T10:46:33Z
dc.date.issued2016
dc.identifier.issn0277-786X
dc.identifier.urihttps://doi.org/10.1117/12.2223389
dc.identifier.urihttp://hdl.handle.net/11655/18905
dc.description.abstractReduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical reactions that take place at the interface during the process. In particular, removal of surface oxides may be controlled via Gibbs reactivity. We have compared electrical performance of type-II superlattice photodetectors, designed for MWIR operation, passivated by different passivation techniques. We have used ALD deposited Al2O3, HfO2, TiO2, ZnO, PECVD deposited SiO2, Si3N4 and sulphur containing octadecanethiol (ODT) self-assembled monolayers (SAM) passivation layers on InAs/GaSb p-i-n superlattice photodetectors with cutoff wavelength at 5.1 mu m. In this work, we have compared the result of different passivation techniques which are done under same conditions, same epitaxial structure and same fabrication processes. We have found that ALD deposited passivation is directly related to the Gibbs free energy of the passivation material. Gibbs free energies of the passivation layer can directly be compared with native surface oxides to check the effectiveness of the passivation layer before the experimental study.
dc.language.isoen
dc.publisherSpie-Int Soc Optical Engineering
dc.relation.isversionof10.1117/12.2223389
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectEngineering
dc.subjectOptics
dc.subjectPhysics
dc.titleGibbs Free Energy Assisted Passivation Layers
dc.typeinfo:eu-repo/semantics/conferenceObject
dc.typeinfo:eu-repo/semantics/publishedVersion
dc.relation.journalInfrared Technology And Applications Xlii
dc.contributor.departmentNükleer Enerji Mühendisliği
dc.identifier.volume9819
dc.description.indexWoS


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