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dc.contributor.authorToprak, Ahmet
dc.contributor.authorOsmanoğlu, Sinan
dc.contributor.authorÖztürk, Mustafa
dc.contributor.authorYılmaz, Doğan
dc.contributor.authorCengiz, Ömer
dc.contributor.authorŞen, Özlem
dc.contributor.authorBütün, Bayram
dc.contributor.authorŞadan, Özcan
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2019-12-13T06:29:31Z
dc.date.available2019-12-13T06:29:31Z
dc.date.issued2018
dc.identifier.issn0268-1242
dc.identifier.urihttps://doi.org/10.1088/1361-6641/aaebab
dc.identifier.urihttp://hdl.handle.net/11655/18326
dc.description.abstractThis work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 mu m drain-to-source spacing, 125 mu m gate width and 0.3 mu m gate length in various gate structures were fabricated to achieve the desired frequency response with a robust, high yield, and repeatable process. The maximum drain current (I-DS,I-max), maximum DC transconductance (g(m) ), pinch-off voltage (V-th ), current-gain cutoff frequency (f(T) ), maximum oscillation frequency (f(max) ), and RF characteristics of the devices in terms of the small-signal gain and RF output power (P-out ) at 8 GHz were investigated. The results showed that the output power is increased by 1 dB when the gate structure is changed from field plate to gamma gate. The V-th, g(m) , f(T) and f(max) , values are maximized when the thickness of the passivation layer between the gate foot and the gate head is minimized It is shown that the I-DS,I-max , is decreased and P-out is increased when the gate recess etching process is performed.
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.isversionof10.1088/1361-6641/aaebab
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectEngineering
dc.subjectMaterials Science
dc.subjectPhysics
dc.titleEffect of Gate Structures on The Dc and Rf Performance of Algan/Gan Hemts
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion
dc.relation.journalSemiconductor Science And Technology
dc.contributor.departmentFizik Mühendisliği
dc.identifier.volume33
dc.identifier.issue12
dc.description.indexWoS


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