dc.contributor.author | Toprak, Ahmet | |
dc.contributor.author | Osmanoğlu, Sinan | |
dc.contributor.author | Öztürk, Mustafa | |
dc.contributor.author | Yılmaz, Doğan | |
dc.contributor.author | Cengiz, Ömer | |
dc.contributor.author | Şen, Özlem | |
dc.contributor.author | Bütün, Bayram | |
dc.contributor.author | Şadan, Özcan | |
dc.contributor.author | Özbay, Ekmel | |
dc.date.accessioned | 2019-12-13T06:29:31Z | |
dc.date.available | 2019-12-13T06:29:31Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0268-1242 | |
dc.identifier.uri | https://doi.org/10.1088/1361-6641/aaebab | |
dc.identifier.uri | http://hdl.handle.net/11655/18326 | |
dc.description.abstract | This work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 mu m drain-to-source spacing, 125 mu m gate width and 0.3 mu m gate length in various gate structures were fabricated to achieve the desired frequency response with a robust, high yield, and repeatable process. The maximum drain current (I-DS,I-max), maximum DC transconductance (g(m) ), pinch-off voltage (V-th ), current-gain cutoff frequency (f(T) ), maximum oscillation frequency (f(max) ), and RF characteristics of the devices in terms of the small-signal gain and RF output power (P-out ) at 8 GHz were investigated. The results showed that the output power is increased by 1 dB when the gate structure is changed from field plate to gamma gate. The V-th, g(m) , f(T) and f(max) , values are maximized when the thickness of the passivation layer between the gate foot and the gate head is minimized It is shown that the I-DS,I-max , is decreased and P-out is increased when the gate recess etching process is performed. | |
dc.language.iso | en | |
dc.publisher | Iop Publishing Ltd | |
dc.relation.isversionof | 10.1088/1361-6641/aaebab | |
dc.rights | info:eu-repo/semantics/openAccess | |
dc.subject | Engineering | |
dc.subject | Materials Science | |
dc.subject | Physics | |
dc.title | Effect of Gate Structures on The Dc and Rf Performance of Algan/Gan Hemts | |
dc.type | info:eu-repo/semantics/article | |
dc.type | info:eu-repo/semantics/publishedVersion | |
dc.relation.journal | Semiconductor Science And Technology | |
dc.contributor.department | Fizik Mühendisliği | |
dc.identifier.volume | 33 | |
dc.identifier.issue | 12 | |
dc.description.index | WoS | |