AŞIRI SELENYUM KATKILI SİYAH SİLİSYUM GÖRÜNÜR VE KIZILÖTESİ DEDEKTÖRLERİN ÜRETİMİ VE KARAKTERİZASYONU

Abstract

Selenium (Se) ions which are double donor ions, were implanted under the linear accelerator into the 100 oriented silicon (Si) material could be used for night vision applications with low cost and high performance, except only for the visible band (VIS) and near infrared (NIR) The laser is operated with the activation of the donor ions by the p-type Si (100) substrate ions by the application of the rapid surface melting and activation energy with the amorphous surface nanosecond laser (Nd:YAG) and the laser energy with specific energy densities for crystallization, in the other case crystallization as well as surface smoothing at 300 nm depth. The ion-implanted silicon, after surface roughening and after the surface smoothing, the permeability and reflection coefficient ratios were measured in FTIR and the absorptance was calculated and the absorption coefficient of the light was calculated from these absorptances. Subsequently, those samples were measured at monochromator for VIS & NIR spectrum, FTIR spectral response for IR spectrum and peak response with black body at room temperature and liquid nitrogen temperature. Jones detectivity (D*) value was calculated from this data. VIS & NIR region peak response was measured as 20.4 A/W for 0 V voltage and 20.8 A/W for -60 mV at room temperature and 100% cut-off wavelength was observed at 1.2 μm. Jones detectivity was calculated as 1014 cm.Hz1/2.W-1 (Jones). For MWIR & LWIR bands, 100% cut-off wavelength was observed to be 9.5 μm. Peak responsivity was calculated at 10-5 A/W and detectivity was calculated as 1010 cm.Hz1/2.W-1. In order to prevent surface leakage current, PECVD passivation of SiO2 was deposited to the rough surface. After passivation, VIS & NIR region peak responsivity was measured as 32.4 A/W for 0 V voltage and 33.2 A/W for -60 mV at room temperature. Detectivity was calculated as 1014 cm.Hz1/2.W-1. Detectivity in the IR region was calculated as 1013 cm.Hz1/2.W-1 for 0 V bias and 1011 cm.Hz1/2.W-1 for -60 mV bias. Only melted samples with 1.8 J/cm2 energy density characterized with the responsivities 67.3 A/W for 0 V, 68.2 A/W for -60 mV bias at room temperature and 56.4 A/W at 0 V, 59.2 A/W at -60 mV for 79 K temperature. The D* values was calculated the order of 1013 cm.Hz1/2.W-1 for 0 V bias and 1014 cm.Hz1/2.W-1 for -60 mV bias at the room temperature.