Inp Tabanlı Kuantum Kuyulu Kızılötesi Dedektör Dizinlerinin Fabrikasyonu ve Karakterizasyonu
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In this thesis, fabrication and characterization of infrared photodetector arrays have been carried out purchased InGaAs/InP based quantum well photodetector (QWIP) wafers which were grown by Molecular Beam Epitaxy. InGaAs/InP material structures are thought to be a superior alternative to AlGaAs/GaAs material structures for long wave infrared sensing. Because of its high degree uniformity obtained in the processes of crystal growth and fabrication, this material belonging to the III-V group of the periodic table has been proved to be mature. The disadvantages of QWIPs constructed from AlGaAs/GaAs material system, like low quantum efficiency, long integration times, low detectivity limit the usage of AlGaAs/GaAs QWIP. In this thesis, research and development based work has been done using InGaAs/InP material system, to eliminate those disadvantages. Additionally, for the first time in Turkey ,4? size InP substrate was used and its microfabrication was completed and 20 QWIP FPA detectors of 640x512 format array has been produced. The performance measurements of these were completed by performing electrical and optical characterizations.